Memory device and manufacturing method thereof

ABSTRACT

The invention provides a memory and a forming method thereof. By connecting two node contact parts filled in two node contact windows at the edge and adjacent to each other, a large-sized combined contact can be formed, so that when preparing the node contact parts, the morphology of the combined contact at the edge position can be effectively ensured, and under the blocking protection of the combined contact with a large width, the rest of the node contact parts can be prevented from being greatly eroded, and the morphology accuracy of the independently arranged node contact parts can be improved, thereby being beneficial to improving the device performance of the formed memory.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. Application No.17/151,669, filed on January 19th, 2021. The content of the applicationis incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to the technical field of semiconductors, inparticular to a memory device and manufacturing method thereof

2. Description of the Prior Art

Memory device, such as dynamic random access memory (DRAM), usually hasa memory cell array including a plurality of memory cells arranged in anarray. The memory device further comprises a storage capacitor forstoring charges representing stored information, and the storage unitscan be electrically connected with the storage capacitor through a nodecontact part, thereby realizing the storage function of each storageunit.

At present, a method for preparing the node contact is, for example, todefine a node contact window, and then fill the node contact window witha conductive material layer to form the node contact. When preparing thenode contact, the conductive material layer fills the node contactwindow and extends out of the node contact window further, so that theconductive material layers filled in different node contact windows areconnected with each other. Based on this, it is necessary to divide theconductive material layers by a patterning process to form mutuallyseparated node contact parts.

However, when the conductive material layer is patterned to form thenode contact, the pattern morphology of the node contact correspondingto the edge position is easily deformed, which will adversely affect theperformance of the node contact, resulting in poor stability of thefinally formed semiconductor device.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a memory device tosolve the problem that the node contact part at the edge position of theexisting memory is prone to abnormal morphology, thus affecting thememory performance.

To solve the above technical problems, the present invention provides amemory device, including: a substrate on which a memory region and aperipheral region are defined, the peripheral region being locatedoutside the memory region, a plurality of isolation pillars formed onthe substrate and at least located in the memory region for defining aplurality of node contact windows in the memory region of the substrate,and the plurality of node contact windows are aligned and arranged in aplurality of rows in a predetermined direction, and a plurality of nodecontacts which fill the node contact windows and are arranged in aplurality of rows, and two node contacts filled in two adjacent nodecontact windows at the edge in each row are connected with each other,two node contacts which are connected with each other form a combinedcontact, and the node contact part located at the side of the combinedcontact far away from the peripheral region forms an independentcontact, and each independent contact is filled with a node contactwindow.

Optionally, the isolation pillars are spaced between adjacent nodecontact parts; An isolation pillar spaced between two node contacts inthe combined contact defines a first isolation pillar, and the two nodecontacts in the combined contact cover the first isolation pillar andare connected with each other on the top surface of the first isolationpillar.

Optionally, isolation pillars are spaced between adjacent independentcontacts define second isolation pillars, and the top surfaces of thesecond isolation pillars are lower than the top surfaces of theindependent contacts, and the memory device further comprises a firstshielding layer, the first shielding layer is at least filled betweenthe adjacent independent contacts and positioned on the second isolationpillar.

Optionally, an isolation pillar spaced between two node contact parts inthe combined contact defines a first isolation pillar, and the topsurface of the first isolation pillar is higher than the top surface ofthe second isolation pillar.

Optionally, the isolation pillars are also formed in the peripheralregion and define third isolation pillars, and insulation fillingpillars are spaced between adjacent third isolation pillars.

Optionally, the memory device further comprises an electricallyconductive layer formed on at least part of the third isolation pillars,the top surface of part of the third isolation pillars covered by theelectrically conductive layer is higher than the top surface of anotherpart of the third isolation pillars not covered by the electricallyconductive layer.

Optionally, the electrically conductive layer and the combined contactare arranged at intervals, and the top surfaces of the third isolationpillar and the insulation filling pillar located between theelectrically conductive layer and the combined contact are lower thanthe top surface of the node contact part, so as to define a groovebetween the electrically conductive layer and the combined contact.

Optionally, the memory device further comprises a second shielding layerwhich is at least filled in the groove between the electricallyconductive layer and the combined contact.

Optionally, the memory device further comprises a plurality of isolationspacers, and the isolation spacers are formed on the sidewalls of thegrooves, an insulating film layer is also formed on the bottom wall ofthe groove, which covers the top surface of the third isolation pillarand the top surface of the insulation filling pillar in the groove andis connected with the bottom of the isolation spacer.

Optionally, the memory device further comprises a plurality of isolationspacers, the isolation spacers are formed on the sidewalls of thegrooves, and the bottom parts of the isolation spacers cover the thirdisolation pillars, in the groove, the top surface of the third isolationpillar covered by the isolation spacer is higher than that of the thirdisolation pillar not covered by the isolation spacer.

In addition, the invention also provides a method for forming thememory, which comprises the following steps: providing a substrate, amemory region and a peripheral region are defined on the substrate, andthe peripheral region is positioned outside the memory region, forming aplurality of isolation pillars on the substrate, the isolation pillarsare at least located in the memory region to define a plurality of nodecontact windows in the memory region of the substrate, and the nodecontact windows are aligned and arranged in a plurality of rows in apredetermined direction, and a plurality of node contacts are formed,which fill the node contact windows and are arranged in multiple rows,and two node contacts filled with two node contact windows which are themost marginal and close to each other in each row are connected witheach other, the two node contacts connected with each other form acombined contact, and the node contact part on the side of the combinedcontact far away from the peripheral region forms an independentcontact, and each independent contact is filled with a node contactwindow.

Optionally, two node contact windows located at the edge and adjacent toeach row of node contact windows are jointly defined as a combinedcontact window, and the node contact window located at the side of thecombined contact window far from the peripheral region is defined as anindependent contact window, the method for forming the node contact partcomprises the following steps: forming a conductive material layer, theconductive material layer fills the node contact window and covers thetop surface of the isolation pillar, forming a patterned mask layer onthe conductive material layer, the patterned mask layer at leastcomprises a first pattern and a second pattern, the first pattern coversthe combined contact window and the second pattern covers theindependent contact window, and etching the conductive material layerwith the patterned mask layer as a mask to form a plurality of nodecontacts, two node contacts filled in the combined contact window areconnected with each other to form the combined contact, and nodecontacts filled in the independent contact window are separated fromeach other to form the independent contact.

In some embodiment of the present invention, a memory device isdisclosed, the memory device includes a substrate, a memory region and aperipheral region are defined thereon, the peripheral region beinglocated outside the memory region, a plurality of isolation pillarsformed on the substrate and at least located in the memory region fordefining a plurality of node contact windows in the memory region of thesubstrate, and a plurality of node contacts, the plurality of nodecontacts fill the node contact windows and arranged in a plurality ofrows, at least two of the plurality of node contacts filled in twoadjacent node contact windows are connected with each other and to forma combined contact, and a plurality of the node contacts located besidethe combined contact are defined as a plurality of independent contacts,and each independent contact is filled with a node contact window.

In some embodiment of the present invention, the isolation pillars aredisposed between adjacent node contacts, an isolation pillar disposedunder the combined contact is defined as a first isolation pillar, andthe two node contacts of the combined contact are connected with eachother on a top surface of the first isolation pillar.

In some embodiment of the present invention, the isolation pillardisposed between adjacent independent contacts are defined as a secondisolation pillar, and a top surface of the second isolation pillar islower than a top surface of each independent contact.

In some embodiment of the present invention, an isolation pillardisposed under the combined contact is defined as a first isolationpillar, and a top surface of the first isolation pillar is higher than atop surface of the second isolation pillar.

In some embodiment of the present invention, the isolation pillars arefurther formed in the peripheral region, and the isolation pillarsdisposed in the peripheral region are defined as a plurality of thirdisolation pillars, and at least one insulation filling pillar isdisposed between two adjacent third isolation pillars.

In some embodiment of the present invention, the memory device furtherincludes an electrically conductive layer formed on at least part of thethird isolation pillars, a top surface of part of the third isolationpillars covered by the electrically conductive layer is higher than atop surface of another part of the third isolation pillars not coveredby the electrically conductive layer.

In some embodiment of the present invention, the top surface of parts ofthe third isolation pillars and the top surface of parts of theinsulation filling pillars located are lower than the top surface of theelectrically conductive layer and the top surface of the combinedcontact, so as to define a groove between the electrically conductivelayer and the combined contact.

In some embodiment of the present invention, the memory device furtherincludes a first shielding layer, the first shielding layer is at leastfilled between the adjacent independent contacts and positioned on thesecond isolation pillar, and a second shielding layer, the secondshielding layer is at least filled in the groove between theelectrically conductive layer and the combined contact.

In some embodiment of the present invention, the memory device furtherincludes an U-shaped insulating film layer disposed beside the combinedcontact, the U-shaped insulating film layer covers the top surface ofthe third isolation pillar and the top surface of the insulation fillingpillar.

In some embodiment of the present invention, the memory device furtherincludes at least one isolation spacers disposed beside the combinedcontact, and the at least one isolation spacers covers parts of thethird isolation pillars, the top surface of the third isolation pillarcovered by the isolation spacer is higher than the top surface of thethird isolation pillar not covered by the isolation spacer.

In some embodiment of the present invention, a method for forming amemory device is disclosed, the method including: forming a substrate, amemory region and a peripheral region are defined thereon, theperipheral region being located outside the memory region, forming aplurality of isolation pillars formed on the substrate and at leastlocated in the memory region for defining a plurality of node contactwindows in the memory region of the substrate, and forming a pluralityof node contacts, the plurality of node contacts fill the node contactwindows and arranged in a plurality of rows, at least two of theplurality of node contacts filled in two adjacent node contact windowsare connected with each other and to form a combined contact, and aplurality of the node contacts located beside the combined contact aredefined as a plurality of independent contacts, and each independentcontact is filled with a node contact window.

In some embodiment of the present invention, the isolation pillars aredisposed between adjacent node contacts, an isolation pillar disposedunder the combined contact is defined as a first isolation pillar, andthe two node contacts of the combined contact are connected with eachother on a top surface of the first isolation pillar.

In some embodiment of the present invention, the isolation pillardisposed between adjacent independent contacts are defined as a secondisolation pillar, and a top surface of the second isolation pillar islower than a top surface of each independent contact.

In some embodiment of the present invention, an isolation pillardisposed under the combined contact is defined as a first isolationpillar, and a top surface of the first isolation pillar is higher than atop surface of the second isolation pillar.

In some embodiment of the present invention, the isolation pillars arefurther formed in the peripheral region, and the isolation pillarsdisposed in the peripheral region are defined as a plurality of thirdisolation pillars, and at least one insulation filling pillar isdisposed between two adjacent third isolation pillars.

In some embodiment of the present invention, the memory device furtherincludes forming an electrically conductive layer formed on at leastpart of the third isolation pillars, a top surface of part of the thirdisolation pillars covered by the electrically conductive layer is higherthan a top surface of another part of the third isolation pillars notcovered by the electrically conductive layer.

In some embodiment of the present invention, the top surface of parts ofthe third isolation pillars and the top surface of parts of theinsulation filling pillars located are lower than the top surface of theelectrically conductive layer and the top surface of the combinedcontact, so as to define a groove between the electrically conductivelayer and the combined contact.

In some embodiment of the present invention, the memory device furtherincludes forming a first shielding layer, the first shielding layer isat least filled between the adjacent independent contacts and positionedon the second isolation pillar, and forming a second shielding layer,the second shielding layer is at least filled in the groove between theelectrically conductive layer and the combined contact.

In some embodiment of the present invention, the memory device furtherincludes forming an U-shaped insulating film layer beside the combinedcontact, the U-shaped insulating film layer covers the top surface ofthe third isolation pillar and the top surface of the insulation fillingpillar.

In some embodiment of the present invention, the memory device furtherincludes forming at least one isolation spacers beside the combinedcontact, and the at least one isolation spacers covers parts of thethird isolation pillars, the top surface of the third isolation pillarcovered by the isolation spacer is higher than the top surface of thethird isolation pillar not covered by the isolation spacer.

In the memory device provided by the invention, two node contact partsfilled in two adjacent node contact windows at the edge in each row areconnected with each other, so that a combined contact with larger sizecan be formed, therefore, when preparing the node contact parts, twonode contact parts formed at the edge position can be connected witheach other to form a combined contact with larger size, so that theappearance of the combined contact at the edge position can beeffectively guaranteed. In addition, under the blocking protection ofthe combined contacts with larger width, the node contact parts arrangedinside can be further prevented from being eroded greatly, and theappearance precision of other node contact parts is improved, therebybeing beneficial to improving the device performance of the formedmemory.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 a is a schematic cross-sectional view of a memory device inembodiment 1 of the present invention, in which an isolation pillar anda node contact part are formed;

FIG. 1 b is a schematic cross-sectional view of a memory device with ashielding layer formed in the first embodiment of the present invention;

FIG. 2 is a flow chart of a method for forming a memory device inembodiment 1 of the present invention;

FIGS. 3 a, 3 b, 3 c, 3 d and 3 e are schematic structural diagrams ofthe memory device in the first embodiment of the present inventionduring its preparation;

FIG. 4 is a schematic structural diagram of a memory device in theembodiment 2 of the present invention;

FIG. 5 is a schematic structural diagram of a memory device in theembodiment 3 of the present invention.

DETAILED DESCRIPTION

The memory and its forming method proposed by the present invention willbe further described in detail with reference to the drawings andspecific embodiments. Advantage and features of that present inventionwill become more apparent from the follow description. It should benoted that the drawings are all in a very simplified form and useimprecise scale, which is only for the purpose of conveniently andclearly assisting in explaining the embodiments of the presentinvention.

FIG. 1 a is a schematic cross-sectional view of a memory device in thefirst embodiment of the present invention in which an isolation pillarand a node contact part are formed, and FIG. 1 b is a schematiccross-sectional view of a memory device in the first embodiment of thepresent invention in which a shielding layer is formed. Referring toFIGS. 1 a and 1 b , the memory device includes a substrate 100, aplurality of isolation pillars 300 formed on the substrate 100, and aplurality of node contacts.

Specifically, a plurality of active areas are formed in the substrate100, which are arranged in an array, and adjacent active areas can beseparated from each other by the first trench isolation structure 110,and a memory cell is formed on the active areas based on the activeareas. The active areas arranged at the edge position define the firstactive area AA1, and the active areas surrounded by the first activearea AA1 define the second active area AA2.

It should be noted that, due to the limitation of the existingsemiconductor manufacturing process, the quality of the active area (forexample, the first active area AA1) arranged at the edge position amongthe formed active areas is low. If the memory cells are furthermanufactured on the low-quality active areas, the device performance ofthe memory cells formed based on the active areas at the edge positionwill be affected, and the memory cells with performance defects willneed to be discarded, which will inevitably lead to the waste of cost.

Based on this, in this embodiment, at least the active area located atthe edge position can be defined as a non-functional active area, whichis not used to form a memory cell, that is, the non-functional activearea includes the first active area AA1. And the second active area AA2surrounded by the first active area AA1 is at least partially defined asa functional active area for forming an effective memory cell.

With continued reference to FIG. 1 a , in this embodiment, a memoryregion 100A and a peripheral region 100B located outside the memoryregion 100A are defined on the substrate 100, and a plurality of activeareas are formed in the memory region 100A. A second trench isolationstructure 120 is formed in the area where the peripheral region 100B isconnected with the memory region 100A, so as to isolate thesemiconductor devices in the memory region 100A from those in theperipheral region 100B. It should be recognized that the first activearea AA1 arranged at the edge position among the plurality of activeareas is correspondingly close to the peripheral region 100B.

It can be considered that the active area closest to the peripheralregion 100B among the plurality of active areas defines a first activearea AA1, and the active area located on the side of the first activearea away from the peripheral region 100B among the plurality of activeareas defines a second active area AA2.

With continued reference to FIG. 1 a , a plurality of isolation pillars300 are formed on the substrate 100 and located in the memory region100A for defining a plurality of node contact windows on the substrate100, and the node contact windows are aligned in a plurality of rows ina predetermined direction. It can be considered that the plurality ofisolation pillars 300 include isolation pillars partially extendingalong the first direction and isolation pillars partially extendingalong the second direction, so that the plurality of node contactwindows can be surrounded by isolation pillars intersecting in differentdirections.

Furthermore, among the plurality of isolation pillars 300, the isolationpillars extending along the first direction and the isolation pillarsextending along the second direction are perpendicular to each other, sothat the defined plurality of node contact windows can be aligned in thefirst direction and the second direction. At this time, it can beconsidered that a plurality of node contact windows are arranged inmultiple rows in the first direction and the second direction.

With continued reference to FIG. 1 a , the node contacts fill the nodecontacts and are correspondingly arranged in multiple rows, and the nodecontacts are electrically connected with the corresponding active areas.Two node contacts filled with two node contact windows which are themost marginal and close to each other in each row are connected witheach other.

As described above, in this embodiment, at least the active area locatedat the edge position is defined as a non-functional active area, and atthis time, the node contact part located at the edge position andconnected with the non-functional active area can also becorrespondingly defined as a non-functional contact part. Therefore,even if the two node contacts located at the edge are connected witheach other, the device performance of the whole memory device will notbe affected.

In this embodiment, two node contacts which are filled with the two mostmarginal node contact windows in each row and connected with each otherare defined as a combined contact 210, and the node contacts located onthe side of the combined contact 210 away from the peripheral region100B in each row are defined as independent contacts 220, and eachindependent contact 220 is filled with a node contact window.

That is, the width dimension of the combined contact 210 composed ofinterconnected node contact parts is larger than that of the independentcontact 220. For example, the width dimension D1 of the combined contact210 may be greater than twice the width dimension D2 of the independentcontact portion 220 (i.e., D1 > 2 * D2).

It should be noted that, in the traditional process, when the sameconductive material layer is patterned to divide the conductive materiallayer to form mutually separated node contacts, the node contacts at theedge positions are usually subjected to a large etching attack, whichleads to the node contacts at the edge positions being easily eroded anddeformed. Based on this, in this embodiment, the active area at the edgeposition is defined as a non-functional active area, and the nodecontacts at the edge position are connected with each other to form thecombined contact 210 with a larger size, so that the morphology of thecombined contact 210 can be guaranteed even if the combined contact 210is subjected to a larger etching attack. In addition, under the blockingprotection of the combined contact 210 with large width, the problemthat the independent contact 220 adjacent to the combined contact 210 isexcessively eroded can be effectively alleviated.

Further, the node contact portion includes a first conductive layer 200a, a second conductive layer 200 b, and a third conductive layer 200 c.The first conductive layer 200 a fills the bottom of the node contactwindow, and the second conductive layer 200 b is located between thefirst conductive layer 200 a and the third conductive layer 200 c, andcovers the bottom surface and at least part of the sidewall of the thirdconductive layer 200 c.

It should be recognized that the node contact window is surrounded bythe isolation pillar 300, and at this time, the isolation pillar 300 iscorrespondingly spaced between adjacent node contacts. Specifically, anisolation pillar 300 spaced between two node contacts in the combinedcontact 210 defines a first isolation pillar 310, and the two nodecontacts in the combined contact 210 cover the first isolation pillar310 and are connected to each other on the top surface of the firstisolation pillar 310. In this embodiment, in the combined contact 210,two second conductive layers 200 b of two node contacts are connected toeach other on the top surface of the first isolation pillar 310, and twothird conductive layers 200 c of two node contacts are connected to eachother above the first isolation pillar 310.

And, the isolation pillars 300 spaced between the adjacent independentcontacts 220 define second isolation pillars 320, and the top surfacesof the second isolation pillars 320 are lower than the top surfaces ofthe independent contacts 220. In this embodiment, the top surface of thesecond isolation pillar 320 is lower than the top surface of the firstisolation pillar 310.

Referring to FIGS. 1 a and 1 b , in this embodiment, the top surfaces ofthe independent contact portion 220 and the combined contact 210 areflush, and at this time, both the independent contact portion 220 andthe combined contact 210 protrude relative to the second isolationpillar 320. For this reason, the memory device in this embodimentfurther includes a first shielding layer 510, which is at least filledbetween the adjacent independent contacts 220 and located on the secondisolation pillar 320. Furthermore, the first shielding layer 510 is alsospaced between the independent contact 220 and the combined contact 210.

In addition, the isolation pillar 300 may be further formed in theperipheral region 100B to form a third isolation pillar 330, and at thistime, for example, a peripheral contact window may be defined in theperipheral region 100B. And, the peripheral contact window is filledwith insulation filling pillars 400, in other words, the insulationfilling pillars 400 are spaced between the adjacent third isolationpillars 330.

Optionally, the memory device further includes an electricallyconductive layer 230 formed on at least part of the third isolationpillar 330. The top surfaces of some third isolation pillars covered bythe electrically conductive layer 230 are higher than the top surfacesof other third isolation pillars not covered by the electricallyconductive layer 230. In this embodiment, the electrically conductivelayer 230 covers the top surface of the third isolation pillar 330 andalso extends to cover the adjacent insulation contact pillar 400, andthe top surfaces of the third isolation pillar and insulation contactpillar covered by the electrically conductive layer 230 are higher thanthose of the third isolation pillar and insulation contact pillar notcovered by the electrically conductive layer 230.

In this embodiment, the electrically conductive layer 230 closest to thememory region 100A and the combined contact 210 are spaced apart fromeach other, and the top surfaces of the third isolation pillar 330 andthe insulation filling pillar 400 located between the electricallyconductive layer 230 and the combined contact 210 are lower than the topsurface of the node contact, so as to define a groove between theelectrically conductive layer 230 and the combined contact 210. Morespecifically, the top surfaces of the third isolation pillar 330 and theinsulation filling pillar 400 located between the electricallyconductive layer 230 and the combined contact 210 are lower than the topsurfaces of the third isolation pillar 330 and the insulation fillingpillar 400 covered by the electrically conductive layer 230.

It should be noted that the number of the third isolation pillars 330and the number of the insulation filling posts 400 between theelectrically conductive layer 230 and the combined contact 210 can beadjusted according to actual conditions (i.e., the number of the thirdisolation pillars 330 and the number of the insulation filling posts 400in the grooves can be adjusted according to actual conditions). Forexample, in this embodiment, there are two third isolation pillars 330and two insulation filling posts 400 between the electrically conductivelayer 230 and the combined contact 210. Furthermore, the number of thethird isolation pillars and the insulation filling pillars covered bythe electrically conductive layer 230 can be adjusted to one or morecorrespondingly. In this embodiment, two third isolation pillars and oneinsulation filling pillar are covered under the electrically conductivelayer 230.

Specifically, the top surfaces of the third isolation pillar 330 and theinsulating contact pillar 400 that are not covered by the electricallyconductive layer 230 may be flush with the top surface of the secondisolation pillar 320, for example. And, the top surfaces of the thirdisolation pillar 330 and the insulating contact pillar 400 covered bythe electrically conductive layer 230 may be, for example, flush withthe top surface of the first isolation pillar 310.

With continued reference to FIGS. 1 a and 1 b , the electricallyconductive layer 230 includes a first electrically conductive layer anda second electrically conductive layer, and the first electricallyconductive layer and the second electrically conductive layer aresequentially stacked on the third isolation pillar 330 and theinsulation filling pillar 400.

In this case, the second conductive layer 300 b and the third conductivelayer 300 c in the electrically conductive layer 230 and the nodecontact portion can be simultaneously prepared and formed on the basisof the same conductive material layer by a patterning process. Theformation method of the electrically conductive layer 230 and the nodecontact will be described in detail below.

With continued reference to FIG. 1 b , the memory device furtherincludes a second shielding layer 520, which is at least filled in thegroove between the electrically conductive layer 230 and the combinedcontact 210.

In a further scheme, a plurality of electrically conductive layers 230can be formed in the peripheral region 100B, and the heights of thethird isolation pillars 330 and the insulation filling pillars 400between the adjacent electrically conductive layers 230 arecorrespondingly lower. Based on this, the second shielding layer 520 isalso filled between the adjacent electrically conductive layers 230.

Next, the method of forming the memory described above in thisembodiment will be described in detail with reference to FIG. 2 andFIGS. 3 a to 3 e . FIG. 2 is a schematic flow chart of a method forforming a memory device in embodiment 1 of the present invention, andFIGS. 3 a to 3 e are schematic structural diagrams of the memory devicein the preparation process of embodiment 1 of the present invention.

In step S100, referring specifically to FIG. 3 a , a substrate 100 isprovided, on which a memory region 100A and a peripheral region 100B aredefined, and the peripheral region 100B is located outside the memoryregion 100A.

Specifically, a plurality of active areas are formed in the memoryregion 100A of the substrate 100, and adjacent active areas can beseparated from each other by a first trench isolation structure 110, forexample. Among the plurality of active areas, the active area arrangedat the edge position defines a first active area AA1, and the activearea located on the side of the first active area AA1 far away from theperipheral region defines a second active area AA2.

In this embodiment, the active area located at the edge position can bedefined as a non-functional active area, which is not used to form amemory cell, that is, the non-functional active area includes the firstactive area AA1. And the second active area AA2 surrounded by the firstactive area AA1 is at least partially defined as a functional activearea for forming a memory cell.

Furthermore, a second trench isolation structure 120 may be formed inthe substrate around the active area array, so that the active areaarray in the memory region 100A can be isolated from devices in theperipheral region 100B.

In step S200, as shown in FIG. 3 a , a plurality of isolation pillars300 are formed on the substrate 100, and a plurality of node contactwindows are defined on the substrate 100, and the node contact windowsare aligned in a plurality of rows in a predetermined direction. In thisembodiment, the plurality of node contact windows are formed in thememory region 100A.

As described above, the plurality of isolation pillars 300 may includeisolation pillars extending partially along the first direction andisolation pillars extending partially along the second direction, andthen the plurality of node contact windows may be surrounded byisolation pillars intersecting in different directions. The isolationpillars extending along the first direction and the isolation pillarsextending along the second direction are perpendicular to each other, sothat a plurality of defined node contact windows can be aligned in thefirst direction and the second direction. At this time, it can beconsidered that a plurality of node contact windows are arranged inmultiple rows in the first direction and the second direction.

In this embodiment, two node contact windows located at the edge andadjacent to each other in each row are jointly defined as a combinedcontact window 610, and the node contact window located at the side ofthe combined contact window 610 away from the peripheral region 100B ineach row is defined as an independent contact window 620.

With continued reference to FIG. 3 a , a plurality of isolation pillars300 are formed in the memory region 100A to define a plurality of nodecontact windows (including combined contact windows 610 and independentcontact windows 620) in the memory region 100A, and the isolationpillars 300 are also formed in the peripheral region 100B to defineperipheral contact windows 630 in the peripheral region 100B. Inaddition, in this step, the top surfaces of the plurality of isolationpillars 300 (including the isolation pillars formed in the memory region100A and the isolation pillars formed in the peripheral region 100B) areflush.

In a further scheme, as shown in FIG. 3 b , the peripheral contactwindow 630 is further filled with an insulating filling pillar 400.

In this embodiment, after defining the node contact window, the bottomof the node contact window is further etched so that the bottom of thenode contact window further extends into the active area of thesubstrate 100.

In step S300, as shown in FIG. 3 c to FIG. 3 d , a plurality of nodecontacts are formed, which fill the node contact windows and arearranged in multiple rows, and two node contacts filled with two nodecontact windows which are the most marginal and close to each other ineach row are connected with each other.

In this embodiment, the two node contacts which are filled with the twomost marginal node contact windows in each row and connected with eachother are jointly defined as combined contact 210, and the node contactslocated on the side of the combined contact 210 away from the peripheralregion 100B in each row are defined as independent contacts 220, andeach independent contact 220 is filled with a node contact window. Itcan also be understood that the two node contacts filled in the combinedcontact window 610 are connected with each other to form the combinedcontact 210, and the node contacts filled in the independent contactwindow 620 form the independent contact 220.

With continued reference to FIG. 3 d , the node contact includes a firstconductive layer 200 a, a second conductive layer 200 b and a thirdconductive layer 200 c. The first conductive layer 200 a fills thebottom of the node contact window to electrically connect with theactive area. The second conductive layer 200 b covers the top surface ofthe first conductive layer 200 a and the sidewall of the node contactwindow. The third conductive layer 200 c is formed on the secondconductive layer 200 b and fills the node contact window, and the thirdconductive layer 200 c also extends upward out of the node contactwindow to protrude from the node contact window.

Specifically, the forming method of the node contact part comprises thefollowing steps.

The first step, specifically referring to FIG. 3 c , is to form a firstconductive layer 200 a on the bottom of the node contact window. Thematerial of the first conductive layer 200 a includes polysilicon, forexample.

In the second step, as shown in FIG. 3 c , a conductive material layer800 is formed, which fills the node contact window and covers the topsurface of the isolation pillar 300. In this embodiment, the conductivematerial layer 800 is formed not only in the memory region 100A but alsoin the peripheral region 100B to cover the isolation pillars 300 and theinsulation filling pillars 400 in the peripheral region 100B.

The conductive material layer 800 may specifically include a lowerconductive material layer and an upper conductive material layer whichare stacked up and down. Specifically, the material of the lowerconductive material layer includes titanium nitride, the upperconductive material layer is a metal layer, and the metal layer mayfurther include tungsten.

In this embodiment, the conductive material layer 800 may be aplanarized film layer, so as to utilize the subsequent patterningaccuracy of the conductive material layer 800.

In the third step, as shown in FIG. 3 c , a patterned mask layer isformed on the conductive material layer 800. The patterned mask layeris, for example, a patterned photoresist layer.

Specifically, the patterned mask layer at least includes a first pattern710 and a second pattern 720, both of which are formed in the memoryregion 100A. The first pattern 710 covers the top of the combinedcontact window to define the pattern of the combined contact, and atthis time, the first pattern 710 also covers the isolation pillar 300between two node contact windows in the combined contact window. And,the second pattern 720 covers the independent contact window to definethe pattern of the independent contact.

Furthermore, the width dimension of the first pattern 710 iscorrespondingly larger than that of the second pattern 720 (for example,the width dimension of the first pattern 710 is twice as large as thatof the second pattern 720).

It should be noted that when the patterned mask layer is formed, thefirst pattern 710 at the edge position will also be over-developed, thusaffecting the pattern accuracy of the first pattern 710. In thisembodiment, the width of the first pattern 710 is made larger than thatof the second pattern 720, so that it can be ensured that the firstpattern 710 still meets the size requirements even on the basis ofover-development. In addition, under the blocking protection of thefirst pattern 710 with large width, the over-development of the secondpattern 720 is avoided, and the pattern accuracy of the second pattern720 is guaranteed.

Optionally, the patterned mask layer further includes a third pattern730, which is formed in the peripheral region 100B to define the patternof the electrically conductive layer in the peripheral region 100B.

The fourth step, specifically referring to FIG. 3 d , etches theconductive material layer 800 with the patterned mask layer as a mask,so that the conductive material layers corresponding to the contactwindows of different nodes are separated from each other, therebyforming a combined contact 210 and an independent contact 220 separatedfrom each other. At this time, the width dimension of the combinedcontact 210 is correspondingly larger than that of the independentcontact portion 220. For example, the width dimension D1 of the combinedcontact 210 may be larger than twice the width dimension D2 of theindependent contact portion 220 (i.e., D1 > 2 * D2).

Similarly, when the conductive material layer 800 is etched, the nodecontact at the edge position will be greatly attacked by etching, whichwill cause the node contact at the edge position to be easily eroded anddeformed. Based on this, in this embodiment, two node contacts locatedat the edge and adjacent to each other are connected to form a combinedcontact 210 with a larger size, so that the morphology of the combinedcontact 210 can be guaranteed even if the combined contact 210 is subjected to a larger etching attack. In addition, under the blockingprotection of the combined contact 210 with large width dimension, theproblem that the independent contact 220 adjacent to the combinedcontact 210 is excessively eroded can also be effectively alleviated.

In this embodiment, when the conductive material layer 800 is etchedusing the patterned mask layer as a mask, an electrically conductivelayer 230 corresponding to the third pattern 730 is further formed inthe peripheral region 100B.

Next, referring to FIG. 3 e , in a further scheme, after etching theconductive material layer to expose the isolation pillar 300, it furthercomprises etching the isolation pillar 300 to a predetermined depth. Byfurther etching the isolation pillar 300 between the adjacent nodecontacts, the conductive material between the adjacent node contacts canbe effectively removed to ensure that the adjacent node contacts areseparated from each other.

In this embodiment, the isolation pillar 300 between adjacentindependent contacts 220 is exposed, and the isolation pillar 300between the combined contact 210 and adjacent independent contacts 220is also exposed, and the isolation pillar between two node contacts inthe combined contact 210 is not exposed. Therefore, when etching theisolation pillars 300, the heights of the isolation pillars 300 betweenadjacent independent contacts 220 and between the combined contact 210and adjacent independent contacts 220 are reduced, and the secondisolation pillars 320 can be formed. In addition, the isolation pillarlocated between the two node contacts in the combined contact 210 is notetched, and constitutes the first isolation pillar 310 with higherheight.

With continued reference to FIG. 3 e , in the peripheral region 100B,the electrically conductive layer 230 covers part of the isolationpillars and also extends to cover the adjacent insulation fillingpillars 400. Therefore, when etching the isolation pillars 300, theisolation pillars and insulation filling pillars 400 uncovered by theelectrically conductive layer 230 are also etched at the same time, sothat the heights of the isolation pillars and insulation filling pillars400 uncovered by the electrically conductive layer 230 arecorrespondingly reduced. The isolation pillars located in the peripheralregion 100B define the third isolation pillars 330.

Furthermore, after etching the isolation pillar 300, a first shieldinglayer 510 is formed between the independent contacts 220 and between theindependent contacts 220 and the combined contact 210.

In this embodiment, when the first shielding layer 510 is formed, asecond shielding layer 520 is also formed, and the second shieldinglayer 520 is at least filled between the electrically conductive layer230 and the combined contact 210. It should be recognized that when aplurality of electrically conductive layers 230 are formed in theperipheral region 100B, the second shielding layer 520 is also filledbetween adjacent electrically conductive layers 230.

Example 2

The difference from Embodiment 1 is that in this embodiment, anisolation spacer is formed on the sidewall of the groove between thecombined contact and the electrically conductive layer, so that theisolation spacer at least covers the sidewall of the combined contactnear the peripheral region.

FIG. 4 is a schematic structural diagram of the memory device in theembodiment 2 of the present invention. As shown in FIG. 4 , the topsurfaces of the third isolation pillar and the insulation filling pillarlocated between the electrically conductive layer 230 and the combinedcontact 210 are lower, so that a groove can be defined between theelectrically conductive layer 230 and the combined contact 210. At thistime, part of the sidewall of the combined contact 210 facing theperipheral region will be exposed in the groove. And, if an isolationspacer 520′ is formed on the sidewall of the groove, the isolationspacer 520′ correspondingly covers at least part of the sidewall of thecombined contact 210.

Furthermore, an insulating film layer 530′ is formed on the bottom wallof the groove, which covers the top surfaces of the third isolationpillar and the insulation filling pillar in the groove and connects withthe bottom of the isolation spacer 520′.

In this embodiment, the isolation spacer 520′ and the insulating filmlayer 530′ can be together defined as an U-shaped insulating film layer.The isolation spacer 520′ and the insulating film layer 530′ may beformed at the same time as the first shielding layer 510 formed in thememory region 100A. Specifically, the forming method of the firstshielding layer 510, the isolation spacer 520′ and the insulating filmlayer 530′ includes the following steps, for example.

A first step, forming an insulating material layer, wherein theinsulating material layer fills the gap between adjacent independentcontacts 220, the gap between the independent contacts 220 and thecombined contact 210, and at least fills the groove between the combinedcontact 210 and the electrically conductive layer 230, and the topsurface of the insulating material layer also protrudes upward from thetop surface of the node contacts.

A second step, performing an etch-back process to remove the portion ofthe insulating material layer higher than the node contact portion, andleaving the portion of the insulating material layer filled betweenadjacent independent contacts 220 and the portion filled between theindependent contacts 220 and the combined contact 210 to form the firstshielding layer 510, and, through the etch-back process, the insulatingmaterial layer in the groove is also partially removed to form theisolation spacer 520′ on the sidewall of the groove, and part of theinsulating material layer is left at the bottom of the groove to form aninsulating film layer 530′.

Optionally, after forming the isolation spacer 520′, it further includesforming a passivation layer 900, which fills the groove tocorrespondingly cover the isolation spacer 520′ and the insulating filmlayer 530′. Furthermore, the passivation layer 900 may also cover thefirst shielding layer 510 and the node contact in the memory region100A.

Example 3

The difference from Embodiment 2 is that in this embodiment, the topsurface of the third isolation pillar covered by the isolation spacer ishigher than that of the third isolation pillar not covered by theisolation spacer in the groove not covered by the electricallyconductive layer.

FIG. 5 is a schematic structural diagram of the memory device in theembodiment 3 of the present invention. As shown in FIG. 5 , theisolation spacer 520′ is formed on the sidewall of the groove, and thebottom of the isolation spacer 520′ also partially covers the thirdisolation pillar 330 located in the groove. In the groove, the topsurface of the third isolation pillar covered by the isolation spacer520′ is higher than the top surface of the third isolation pillar notcovered by the isolation spacer 520′. That is, a plurality of differentisolation pillars in this embodiment have at least three differentheights.

Specifically, in this embodiment, the top position of the firstisolation pillar 310 located between two node contacts in the combinedcontact 220 is located at the first height position H1, and the topposition of the third isolation pillar covered by the electricallyconductive layer 230 in the peripheral region 100B is also located atthe first height position H1. And, a groove is formed in the area of theperipheral region 100B not covered by the electrically conductive layer230, and the top position of the third isolation pillar covered by theisolation spacer 520′ in the groove is located at the second heightposition H2, and the top position of the second isolation pillar 320 inthe memory region 100A is also located at the second height position H2.Furthermore, the top position of the third isolation pillar in thegroove that is not covered by the isolation spacer 520′ is located at athird height position H3. The first height position H1 is higher thanthe second height position H2 and the second height position H2 ishigher than the third height position H3.

In this embodiment, in the groove not covering the electricallyconductive layer 230, not only the third isolation pillar but also theinsulation filling pillar 400 is exposed from the isolation spacer 520′.At this time, similar to the third isolation pillar, in the groove, thetop surface of the insulation filling pillar covered by the isolationspacer 520′ is higher than that of the insulation filling pillar notcovered by the isolation spacer 520′. That is, a plurality of differentinsulation filling pillars in this embodiment also have at least threedifferent heights correspondingly.

Furthermore, similar to the second embodiment, the isolation spacer520′, and the first shielding layer 510 formed in the memory region 100Acan be formed at the same time. Specifically, when the etch-back processis performed, the portion of the insulating material layer covering thebottom of the groove can be completely removed to form the isolationspacer 520′ and expose the third isolation pillar and the insulatingmaterial layer. And, after exposing the third isolation pillar and theinsulating material layer, the third isolation pillar and the insulatingmaterial layer may be further etched to reduce the height of the thirdisolation pillar and the insulating material layer not covered by theisolation spacer 520′; to a third height position H3.

It should be noted that the grooves in this embodiment and the groovesin the embodiment 2 have different opening sizes (specifically, theopening size of the grooves in this embodiment may be larger than thatin the embodiment 2). In this way, when the etch-back process isperformed to remove the portion of the insulating material layer higherthan the node contact portion, the isolation spacer 520′ can be formedfor the groove with large opening size, and the insulating materiallayer at the bottom of the groove can be completely removed. And, for agroove with a small opening size, a part of the insulating materiallayer may remain on the bottom of the groove to form the insulating filmlayer 530′.

Similarly, after the isolation spacer 520′ is formed, a passivationlayer 900 may be further formed to fill the groove to correspondinglycover the isolation spacer 520′, the third isolation pillar and theinsulation filling pillar.

To sum up, in the memory device as described above, two node contactparts filled in two node contact windows at the edge and adjacent toeach other in each row are connected to form a combined contact. At thistime, it is equivalent to making the width dimension of the combinedcontact located at the edge position larger than the width dimension ofthe independent contacts arranged inside. Therefore, when preparing thenode contacts, the morphology of the combined contacts can be ensuredeven if the combined contacts located at the edge position are easilysubjected to a large amount of erosion, and under the blockingprotection of the combined contacts with a large width, the rest of thenode contacts can be prevented from being subjected to a large amount oferosion, so that the morphology accuracy of the independently arrangednode contacts can be improved, thereby being beneficial to improving thedevice performance of the formed memory device.

In a further scheme, the active area at the edge position can also bedefined as a non-functional active area, and the node contact part atthe edge position can also be connected with the non-functional activearea correspondingly. In this case, the node contact part at the edgeposition can be defined as a non-functional contact part. Therefore,even if the two node contacts located at the edge position are connectedwith each other, the device performance of the whole memory device willnot be affected.

It should be noted that, although the present invention has beendisclosed as above with preferred embodiments, the above embodiments arenot intended to limit the present invention. For anyone who is familiarwith the field, without departing from the scope of the technical schemeof the present invention, many possible changes and modifications can bemade to the technical scheme of the present invention by using thetechnical contents disclosed above, or modified into equivalentembodiments with equivalent changes. Therefore, any simplemodifications, equivalent changes and modifications made to the aboveembodiments according to the technical essence of the present invention,without departing from the contents of the technical scheme of thepresent invention, still fall within the scope of protection of thetechnical scheme of the present invention.

It should also be understood that, unless otherwise specified or pointedout, the descriptions of the terms “first”, “second” and “third” in thespecification are only used to distinguish various components, elementsand steps in the specification, and are not used to express the logicalrelationship or sequential relationship among various components,elements and steps.

Furthermore, it should be recognized that the terms described herein areonly used to describe specific embodiments, and are not used to limitthe scope of the invention. It must be noted that the singular forms “a”and “an”, as used herein and in the appended claims, include pluralreferences unless the context clearly indicates a contrary meaning. Forexample, a reference to “one step” or “one device” means a reference toone or more steps or devices, and may include secondary steps andsecondary devices. All conjunctions used should be understood in thebroadest sense. And, the word “or” should be understood as having thedefinition of logical “or” instead of logical “exclusive or”, unless thecontext clearly indicates the opposite meaning. In addition, theimplementation of the method and/or device in the embodiment of thepresent invention may include performing the selected tasks manually,automatically or in combination.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A memory device, comprising: a substrate, amemory region and a peripheral region are defined thereon, theperipheral region being located outside the memory region; at least onefirst isolation pillar formed on the substrate and located in the memoryregion; and a plurality of second isolation pillars formed on thesubstrate and located in the memory region and the peripheral region,wherein the at least one first isolation pillar and the plurality ofsecond isolation pillars in the memory region are used for define aplurality of node contact windows in the memory region of the substrate,and wherein a height of the first isolation pillar is higher than aheight of the second isolation pillar.
 2. The memory device according toclaim 1, further comprising a plurality of third isolation pillarsformed on the substrate and located in the peripheral region, whereinthe height of the second isolation pillar is higher than a height of thethird isolation pillar.
 3. The memory device according to claim 2,further comprising at least one insulation filling pillar disposedbetween two adjacent third isolation pillars.
 4. The memory deviceaccording to claim 1, further comprising a plurality of node contacts,the plurality of node contacts fill the node contact windows andarranged in a plurality of rows.
 5. The memory device according to claim4, wherein at least two of the plurality of node contacts filled in twoadjacent node contact windows are connected with each other and to forma combined contact, and a plurality of the node contacts located besidethe combined contact are defined as a plurality of independent contacts,and each independent contact is filled with a node contact window. 6.The memory device according to claim 5, wherein the first isolationpillar is disposed under the combined contact, the at least two nodecontacts of the combined contact are connected with each other on a topsurface of the first isolation pillar.
 7. The memory device according toclaim 5, wherein the second isolation pillar is disposed betweenadjacent independent contacts, and the top surface of the secondisolation pillar is lower than a top surface of each independentcontact.
 8. The memory device according to claim 5, further comprising aspacer disposed on the second isolation pillars, wherein the spacer isdisposed beside the combined contact.
 9. The memory device according toclaim 5, wherein there is no any independent contact disposed betweenthe combined contact and a boundary of the memory region and theperipheral region.
 10. The memory device according to claim 5, furthercomprising a shielding layer, wherein the shielding layer is at leastfilled between the adjacent independent contacts and positioned on thesecond isolation pillar, wherein a top surface of the shielding layer isaligned with a top surface of the combined contact.
 11. A method forforming a memory device, comprising: forming a substrate, a memoryregion and a peripheral region are defined thereon, the peripheralregion being located outside the memory region; forming at least onefirst isolation pillar on the substrate and located in the memoryregion; and forming a plurality of second isolation pillars on thesubstrate and located in the memory region and the peripheral region,wherein the at least one first isolation pillar and the plurality ofsecond isolation pillars in the memory region are used for define aplurality of node contact windows in the memory region of the substrate,and wherein a height of the first isolation pillar is higher than aheight of the second isolation pillar.
 12. The method according to claim11, further comprising forming a plurality of third isolation pillars onthe substrate and located in the peripheral region, wherein the heightof the second isolation pillar is higher than a height of the thirdisolation pillar.
 13. The method according to claim 12, furthercomprising forming at least one insulation filling pillar between twoadjacent third isolation pillars.
 14. The method according to claim 11,further comprising forming a plurality of node contacts, the pluralityof node contacts fill the node contact windows and arranged in aplurality of rows.
 15. The method according to claim 14, wherein atleast two of the plurality of node contacts filled in two adjacent nodecontact windows are connected with each other and to form a combinedcontact, and a plurality of the node contacts located beside thecombined contact are defined as a plurality of independent contacts, andeach independent contact is filled with a node contact window.
 16. Themethod according to claim 15, wherein the first isolation pillar isdisposed under the combined contact, the two node contacts of thecombined contact are connected with each other on a top surface of thefirst isolation pillar.
 17. The method according to claim 15, whereinthe second isolation pillar is disposed between adjacent independentcontacts, and the top surface of the second isolation pillar is lowerthan a top surface of each independent contact.
 18. The method accordingto claim 15, further comprising forming a spacer on the second isolationpillars, wherein the spacer is disposed beside the combined contact. 19.The method according to claim 15, wherein there is no any independentcontact disposed between the combined contact and a boundary of thememory region and the peripheral region.
 20. The memory device accordingto claim 5, further comprising forming a shielding layer, wherein theshielding layer is at least filled between the adjacent independentcontacts and positioned on the second isolation pillar, wherein a topsurface of the shielding layer is aligned with a top surface of thecombined contact.